2SA872, 2SA872A
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
2SA872
–90
–90
–5
–50
300
150
–55 to +150
2SA872A
–120
–120
–5
–50
300
150
–50 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
2SA872
Item
Collector to emitter
breakdown voltage
Collector cutoff current
Symbol Min
V
(BR)CEO
I
CBO
–90
—
—
DC current tarnsfer ratio h
FE1
*
1
h
FE2
Base to emitter voltage V
BE
Collector to emitter
saturation voltage
V
CE(sat)
250
160
—
—
—
—
—
Typ
—
—
—
—
—
—
—
120
1.8
—
Max
—
–0.5
—
800
—
2SA872A
Min
–120
—
—
250
160
Typ
—
—
—
—
—
—
—
120
1.8
—
Max
—
—
–0.5
800
—
–0.75 V
–0.5
—
—
5.0
V
MHz
pF
dB
Unit
V
µA
µA
Test conditions
I
C
= –1 mA, R
BE
=
∞
V
CB
= –75 V, I
E
= 0
V
CE
= –100 V, I
E
= 0
V
CE
= –12 V,
I
C
= –2 mA
V
CE
= –12 V,
I
C
= –0.1 mA
V
CE
= –12 V,
I
C
= –2 mA
I
C
= –10 mA,
I
B
= –1 mA
V
CE
= –12 V,
I
C
= –2 mA
V
CB
= –25 V, I
E
= 0,
f = 1 MHz
V
CE
= –6 V, f = 10 Hz
I
C
= –50
µA
R
g
= 50 kΩ
f = 1 kHz
–0.75 —
–0.5
—
—
5.0
—
—
—
—
Gain bandwidth product f
T
Collector output
capacitance
Noise figure
Cob
NF
—
Note:
D
250 to 500
E
400 to 800
—
1.5
—
—
1.5
dB
1. The 2SA872/A is grouped by h
FE1
as follows.
2
HITACHI [ HITACHI SEMICONDUCTOR ]
