2SA836
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
Tj
Tstg
Ratings
–55
–55
–5
–100
100
200
150
–55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
–55
–55
–5
—
—
160
—
—
—
—
—
—
Note:
C
160 to 320
Typ
—
—
—
—
—
—
–0.1
–0.66
200
2.0
1
0.5
Max
—
—
—
–100
–50
500
–0.5
–0.75
—
—
5
1
V
V
MHz
pF
dB
dB
Unit
V
V
V
nA
nA
Test conditions
I
C
= –10
µA,
I
E
= 0
I
C
= –1 mA, R
BE
=
∞
I
E
= –10
µA,
I
C
= 0
V
CB
= –18 V, I
E
= 0
V
EB
= –2 V, I
C
= 0
V
CE
= –12 V, I
C
= –2 mA
I
C
= –10 mA, I
B
= –1 mA
V
CE
= –12 V, I
C
= –2 mA
V
CE
= –12 V, I
E
= –2 mA
V
CB
= –10 V, I
E
= 0, f = 1MHz
V
CE
= –6 V,
I
C
= –0.1mA,
R
g
= 10 kΩ
f = 10 Hz
f = 1 kHz
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
Noise figuer
V
(BR)EBO
I
CBO
I
EBO
h
FE
*
1
V
CE(sat)
V
BE
f
T
Cob
NF
1. The 2SA836 is grouped by h
FE
as follows.
D
250 to 500
2
HITACHI [ HITACHI SEMICONDUCTOR ]
