2SA743, 2SA743A
Electrical Characteristics
(Ta = 25°C)
2SA743
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CER
I
CER
DC current tarnsfer ratio h
FE
*
1
h
FE
Base to emitter voltage V
BE
Collector to emitter
saturation voltage
V
CE(sat)
Min
–50
–50
–4
—
—
60
20
—
—
—
Typ
—
—
—
—
—
120
—
Max
—
—
—
–20
—
200
—
2SA743A
Min
–80
–80
–4
—
—
60
20
—
—
—
Typ
—
—
—
—
—
120
—
Max
—
—
—
—
–20
200
—
V
V
MHz
Unit
V
V
V
µA
Test conditions
I
C
= –1 mA, I
E
= 0
I
C
= –10 mA, R
BE
=
∞
I
E
= –1 mA, I
C
= 0
V
CE
= –50 V, R
BE
= 1
kΩ
V
CE
= –80 V, R
BE
= 1
kΩ
V
CE
= –4 V, I
C
= –50
mA
V
CE
= –4 V, I
C
= –1 A
(pulse)
V
CE
= –4 V, I
C
= –50
mA
I
C
= –1 A, I
B
= –0.1 A
V
CE
= –4 V, I
C
= –30
mA
–0.65 –1.0
–0.75 –1.5
120
—
–0.65 1.0
–0.75 –1.5
120
—
Gain bandwidth product f
T
Note:
B
60 to 120
1. The 2SA743 and 2SA743A is grouped by h
FE
as follows.
C
100 to 200
2
HITACHI [ HITACHI SEMICONDUCTOR ]
