2SA673, 2SA673A
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
2SA673
–35
–35
–4
–500
400
150
–55 to +150
2SA673A
–50
–50
–4
–500
400
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
2SA673
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Collector to emitter
saturation voltage
DC current trnsfer ratio
DC current trnsfer ratio
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
V
CE(sat)
h
FE
*
1
h
FE
Min
–35
–35
–4
—
—
60
10
—
Typ
—
—
—
—
–0.2
—
—
Max
—
—
—
–0.5
–0.6
320
—
2SA673A
Min
–50
–50
–4
—
—
60
10
—
Typ
—
—
—
—
–0.2
—
—
Max
—
—
—
–0.5
–0.6
320
—
V
Unit
V
V
V
µA
V
Test conditions
I
C
= –10
µA,
I
E
= 0
I
C
= –1 mA, R
BE
=
∞
I
E
= –10
µA,
I
C
= 0
V
CB
= –20 V, I
E
= 0
I
C
= –150 mA,
I
B
= –15 mA*
2
V
CE
= –3 V,
I
C
= –10 mA
V
CE
= –3 V,
I
C
= –500 mA*
2
V
CE
= –3 V,
I
C
=–10 mA
Base to emitter voltage V
BE
–0.64 —
–0.64 —
Notes: 1. The 2SA673 and 2SA673A are grouped by h
FE
as follows.
2. Pulse test
B
60 to 120
C
100 to 200
D
160 to 320
2
HITACHI [ HITACHI SEMICONDUCTOR ]
