2SA673A(K)
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
–50
–50
–4
—
—
—
—
—
60
10
—
—
—
—
Typ
—
—
—
—
—
–0.64
–0.2
–0.87
—
—
120
0.3
0.6
0.4
Max
—
—
—
–0.5
–0.5
—
–0.6
—
320
—
—
—
—
—
MHz
µs
µs
µs
Unit
V
V
V
µA
µA
V
V
V
Test conditions
I
C
= –10
µA,
I
E
= 0
I
C
= –1 mA, R
BE
=
∞
I
E
= –10
µA,
I
C
= 0
V
CB
= –20 V, I
E
= 0
V
EB
= –3 V, I
C
= 0
V
EB
= –3 V, I
C
= –10 mA
I
C
= –150 mA, I
B
= –15 mA*
2
I
C
= –150 mA, I
B
= –15 mA*
2
V
CE
= –3 V, I
C
= –10 mA
V
CE
= –3 V, I
C
= –500 mA*
2
V
CE
= –3 V, I
C
= –10 mA
V
CC
= –10.3 V
I
C
= 10 I
B1
= –10 I
B2
= –10 mA
V
CC
= –5 V,
I
C
= I
B1
= I
B2
= –20 mA
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
Base to emitter voltage
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
DC current transfer ratio
V
(BR)EBO
I
CBO
I
EBO
V
BE
V
CE(sat)
V
BE(sat)
h
FE
*
1
h
FE
Gain bandwidth product
Turn on time
Turn off time
Storage time
f
T
t
on
t
off
t
stg
Notes: 1. The 2SA673A(K) is grouped by h
FE
as follows.
2. Pulse test
B
60 to 120
C
100 to 200
D
160 to 320
See 2SA673A except for the above – mentioned characteristic curves.
3
HITACHI [ HITACHI SEMICONDUCTOR ]
