2SA673A(K)
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(mW)
600
Collector to Emitter Saturation Voltage V
CE(sat)
(V)
Collector to Emitter Saturation
Voltage vs. Collector Current
–0.7
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1
0
–0.1 –0.2 –0.5 –1.0 –2 –5 –10 –20 –50 –100 –200 –500
Collector Current I
C
(mA)
I
C
= 10 I
B
400
200
0
100
150
50
Ambient Temperature Ta (°C)
Base to Emitter Saturation Voltage V
BE(sat)
(V)
–1.1
–1.0
–0.9
–0.8
–0.7
–0.6
–0.5
–25
0
25
50
C
75
°
a=
T
Collector Output Capacitance C
ob
(pF)
Emitter Input Capacitance C
ib
(pF)
Base to Emitter Saturation Voltage vs.
Collector Current
Input and Output Capacitance
vs. voltage
70
60
50
40
30
20
10
0
–0.1
C
ob
(I
E
= 0)
C
ib
(I
C
= 0)
f = 1 MHz
I
C
= 10 I
B
–0.4
–0.1 –0.2 –0.5 –1.0 –2 –5 –10 –20 –50 –100 –200 –500
Collector Current I
C
(mA)
–0.3
–1.0
–3
–10
Collector to Base Voltage V
CB
(V)
Emitter to Base Voltage V
EB
(V)
–30
5
HITACHI [ HITACHI SEMICONDUCTOR ]
