2SA1485
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Ratings
–200
–200
–5
–100
200
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
–200
–200
–5
—
100
—
—
Typ
—
—
—
—
—
—
—
Max
—
—
—
–500
250
–0.5
–1.0
V
V
Unit
V
V
V
µA
Test conditions
I
C
= –10
µA,
I
E
= 0
I
C
= –0.5 mA, R
BE
=
∞
I
E
= –10
µA,
I
C
= 0
V
CE
= –200 V, R
BE
=
∞
V
CE
= –12 V, I
C
= –2 mA*
1
I
C
= –30 mA, I
B
= –3 mA*
1
V
CE
= –12 V, I
C
= –2 mA*
1
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter voltage
Note:
1. Pulse test
V
(BR)EBO
I
CEO
h
FE
V
CE(sat)
V
BE
2
HITACHI [ HITACHI SEMICONDUCTOR ]
