2SA1468
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Ratings
–180
–180
–5
–100
150
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
–180
–180
–5
100
—
—
—
—
Typ
—
—
—
—
—
—
200
3.5
Max
—
—
—
320
–0.5
–1.0
—
—
V
V
MHz
pF
Unit
V
V
V
Test conditions
I
C
= –10
µA,
I
E
= 0
I
C
= –0.5 mA, R
BE
=
∞
I
E
= –10
µA,
I
C
= 0
V
CE
= –12 V, I
C
= –2 mA*
2
I
C
= –30 mA, I
B
= –3 mA*
2
V
CE
= –12 V, I
C
= –2 mA
V
CE
= –12 V, I
C
= –10 mA
V
CB
= –10 V, I
E
= 0, f = 1 MHz
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
V
(BR)EBO
h
FE
*
1
V
CE(sat)
V
BE
f
T
Cob
Notes: 1. The 2SA1468 is grouped by h
FE
as follows.
2. Pulse test
Grade
Mark
h
FE
B
INB
100 to 200
C
INC
160 to 320
2
HITACHI [ HITACHI SEMICONDUCTOR ]
