2SA1350
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Ratings
–40
–30
–5
–100
300
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
–40
–30
–5
—
—
100
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
200
—
1.0
Max
—
—
—
–0.5
–0.5
500
–0.75
–0.2
—
4.5
5.0
V
V
MHz
pF
dB
Unit
V
V
V
µA
µA
Test conditions
I
C
= –10
µA,
I
E
= 0
I
C
= –1 mA, R
BE
=
∞
I
E
= –10
µA,
I
C
= 0
V
CB
= –18 V, I
E
= 0
V
EB
= –2 V, I
C
= 0
V
CE
= –12 V, I
C
= –2 mA
V
CE
= –12 V, I
C
= –2 mA
I
C
= –10 mA, I
B
= –1 mA
V
CE
= –12 V, I
C
= –2 mA
V
CB
= –10 V, I
E
= 0, f = 1 MHz
V
CE
= –6 V, I
C
= –0.1 mA
R
g
= 1 kΩ, f = 1 kHz
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Base to emitter voltage
Collector to emitter saturation
voltage
Gain bandwidth product
Collector output capacitance
Noise figure
Note:
B
100 to 200
V
(BR)EBO
I
CBO
I
EBO
h
FE
*
1
V
BE
V
CE(sat)
f
T
Cob
NF
1. The 2SA1350 is grouped by h
FE
as follows.
C
160 to 320
D
250 to 500
See characteristic curves of 2SA1031.
2
HITACHI [ HITACHI SEMICONDUCTOR ]
