2SA1194(K)
Typical Output Characteristics
P
c
=
.0
–0.8
8W
–1
.6
T
C
= 25°C
–0
4
–0.
DC Current Transfer Ratio vs.
Collector Current
100,000
DC current transfer ratio h
FE
30,000
10,000
3,000
1,000
300
100
–10
V
CE
= –3 V
Pulse
Ta = 75°C
25°C
–1,000
Collector Current I
C
(mA)
–800
–600
–400
–0.2
–0.1
–0.08
–0.06
–0.04
–0.02
–200
–0.01 mA
–0.01
0
I
B
= 0
–2
–4
–6
–8
–10
Collector to emitter Voltage V
CE
(V)
–30
–100
–300
Collector current I
C
(mA)
–1,000
Saturation Voltage vs. Collector Current
Collector to emitter saturation voltage
V
CE (sat)
(V)
Base to emitter saturation voltage
V
BE (sat)
(V)
–10
l
C
= 500 l
B
Pulse
–3
Ta = 25°C
–1.0
V
CE (sat)
–0.3
75°C
V
BE (sat)
Switching time t (µs)
10
3
1.0
Switching Time vs. Collector Current
t
off
t
stg
t
on
t
d
0.3
0.1
0.03
–0.1
–10
–30
–100
–300
Collector current I
C
(mA)
–1,000
0.01
–10
I
C
= 500 I
B
Ta = 25°C
–30
–100
–300
Collector current I
C
(mA)
–1,000
Switching Time Test Circuit
I
C
V
IN
R
1
t
r
, t
f
≤
10ns
V
IN
PW
≥
10µs
duty ratio
≤
10%
l
B1
l
B2
0
D.U.T.
R
L
–
+
–
V
CC
t
d
t
on
Input
–10 V
0
Output
Response Waveform
10%
90%
t
stg
10%
90%
t
off
R
2
0.002
µ
0.002
µ
50
V
BB
6V
+
10%
90%
50
µ
50
µ
3
HITACHI [ HITACHI SEMICONDUCTOR ]
