2SA1194(K)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
–60
—
—
1000
—
—
—
—
Typ
—
—
—
—
—
—
0.7
0.8
Max
—
–1.0
–1.0
—
–2.0
–2.0
—
—
V
V
µs
µs
I
C
= –500 mA
I
B1
= –I
B2
= –1 mA
Unit
V
µA
µA
Test conditions
I
C
= –1 mA, R
BE
=
∞
V
CB
= –60 V, I
E
= 0
V
EB
= –7 V, I
C
= 0
V
CE
= –3 V, I
C
= –500 mA*
1
I
C
= –500 mA, I
B
= –1 mA*
1
Collector to emitter breakdown V
(BR)CEO
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time
Turn off time
Note:
1. Pulse test
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
t
on
t
off
Maximum Collector Dissipation Curve
12
Collector power dissipation Pc (W)
–10
–3 i
C (peak)
–1.0
–0.3
–0.1
–0.03
Area of Safe Operation
=
PW
1m
Collector Current I
C
(A)
8
I
C (max)
PW = 10 ms (1 Shot)
D
(T C O
C
= pe
25 rat
°
C ion
)
s (1
Sho
t)
4
0
50
100
Case Temperature T
C
(°C)
150
Ta = 25°C
–0.01
–0.1 –0.3 –1.0
–3
–10 –30 –100
Collector to emitter Voltage V
CE
(V)
2
HITACHI [ HITACHI SEMICONDUCTOR ]
