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2SA1193 参数 Datasheet PDF下载

2SA1193图片预览
型号: 2SA1193
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延,达林顿 [Silicon PNP Epitaxial, Darlington]
分类和应用: 晶体晶体管
文件页数/大小: 6 页 / 37 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
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2SA1193(K)
Maximum Collector Dissipation Curve
0.9
Collector power dissipation P
C
(W)
Collector current I
C
(A)
–3
–1.0
0.6
–0.3
–0.1
–0.03
–0.01
–0.003
–3
i
C (peak)
I
C max
Area of Safe Operation
PW
=1
m
0 ms 1
=1
s1
ot
sh
ot
sh
PW
Ta = 25°C
PW
=1
1
ms
00
t
sho
0.3
0
50
100
150
Ambient Temperature Ta (°C)
–10
–30
–100
–300
Collector to Emiter Voltage V
CE
(V)
Typical Output Characteristics
–500
Collector current I
C
(mA)
–1
00
DC Current Transfer Ratio vs.
Collector Current
100,000
DC Current transfer ratio h
FE
30,000
10,000
3,000
1,000
300
100
–10
V
CE
= –3 V
Pulse
–30
–100
–300
Collector Current I
C
(mA)
–1,000
Ta = 75
°C
25
°C
–400
0
–8
0
–6
–40
–300
P
C
=
–20
0.
9W
–200
–10
–100
–5
µA
I
B
= 0
0
–2
–4
–6
–8
–10
Collector to Emitter Voltage V
CE
(V)
3