2SA1193(K)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
P
C
Tj
Tstg
Ratings
–60
–60
–7
–0.5
–1.0
0.9
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
–60
—
—
2000
—
—
—
—
Typ
—
—
—
—
—
—
0.3
0.9
Max
—
–1.0
–1.0
—
–1.5
–2.0
—
—
V
V
µs
µs
I
C
= –250 mA
I
B1
= –I
B2
= –0.5 mA
Unit
V
µA
µA
Test conditions
I
C
= –1 mA, R
BE
=
∞
V
CB
= –60 V, I
E
= 0
V
EB
= –7 V, I
C
= 0
V
CE
= –3 V, I
C
= –250 mA*
1
I
C
= –250 mA, I
B
= –0.5 mA*
1
Collector to emitter breakdown V
(BR)CEO
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time
Turn off time
Note:
1. Pulse test
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
t
on
t
off
2
HITACHI [ HITACHI SEMICONDUCTOR ]
