2SA1190, 2SA1191
Noise voltage reffered to input e
n
(nV/
√
Hz)
Collector Output Capacitance vs.
Collector to Base Voltage
Collector output capacitance C
ob
(pF)
100
f = 1 MHz
I
E
= 0
30
Noise Voltage Reffered to Input vs.
Collector Current
10
V
CE
= –6 V
Rg = 0
f = 1 kHz
3
10
1.0
3
0.3
1
–1
–3
–10
–30
–100
Collector to Base Voltage V
CB
(V)
0.1
–0.1
–0.3
–1.0
–3
Collector Current I
C
(mA)
–10
Noise voltage reffered to input e
n
(nV/
√
Hz)
Noise voltage reffered to input e
n
(nV/
√
Hz)
Noise Voltage Reffered to Input vs.
Signal Source Resistance
1,000
V
CE
= –6 V
f = 1 kHz
100
I
C
= –10 mA
10
–1
–0.1
1.0
Noise Voltage Reffered to Input vs.
Collector to Emitter Voltage
1.0
0.9
0.8
0.7
0.6
I
C
= –1 mA
Rg = 0
f = 1 kHz
–3
–10
–30
–100
Collector to Emitter Voltage V
CE
(V)
0.1
10
100
1k
10 k
100 k
Signal Source Resistance R
g
(Ω)
0.5
–1
7
HITACHI [ HITACHI SEMICONDUCTOR ]
