2SA1190, 2SA1191
Electrical Characteristics
(Ta = 25°C)
2SA1190
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current trnsfer ratio
Collector to emitter
saturation voltage
Base to emitter
saturation voltage
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
*
1
V
CE(sat)
V
BE(sat)
Min
–90
–90
–5
—
—
250
—
—
—
—
—
Typ
—
—
—
—
—
—
Max
—
—
—
–0.1
–0.1
800
2SA1191
Min
Typ
Max
—
—
—
–0.1
–0.1
800
Unit
V
V
V
µA
µA
Test conditions
I
C
= –10
µA,
I
E
= 0
I
C
= –1 mA, R
BE
=
∞
I
E
= –10
µA,
I
C
= 0
V
CB
= –70 V, I
E
= 0
V
EB
= –2 V, I
C
= 0
V
CE
= –12 V,
I
C
= –2 mA*
2
I
C
= –10 mA,
I
B
= –1 mA*
2
–120 —
–120 —
–5
—
—
250
—
—
—
—
–0.05 –0.15 —
–0.7
130
3.2
0.15
–1.0
—
—
1.5
—
—
—
—
–0.05 –0.15 V
–0.7
130
3.2
0.15
–1.0
—
—
1.5
V
MHz
pF
dB
Gain bandwidth product f
T
Collector output
capacitance
Noise figure
Cob
NF
V
CE
= –6 V,
I
C
= –10 mA
V
CB
= –10 V, I
E
= 0,
f = 1 MHz
V
CE
= –6 V,
I
C
= –0.1 mA,
R
g
= 10 kΩ
f = 1 kHz
V
CE
= –6 V,
I
C
= –0.1 mA,
R
g
= 10 kΩ
f = 10 Hz
V
CB
= –6 V,
I
C
= –10 mA,
Rg = 0, f = 1 kHz
—
0.2
2.0
—
0.2
2.0
dB
Noise voltage reffered
to input
e
n
—
0.7
—
—
0.7
—
nV/
√Hz
Notes: 1. The 2SA1190 and 2SA1191 are grouped by h
FE
as follows.
2. Pulse test
D
250 to 500
E
400 to 800
3
HITACHI [ HITACHI SEMICONDUCTOR ]
