2SA1188, 2SA1189
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
Tj
Tstg
2SA1188
–90
–90
–5
–100
100
400
150
–55 to +150
2SA1189
–120
–120
–5
–100
100
400
150
–55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
2SA1188
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current trnsfer ratio
Collector to emitter
saturation voltage
Base to emitter
saturation voltage
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
*
1
V
CE(sat)
V
BE(sat)
Min
–90
–90
–5
—
—
250
—
—
—
—
Typ
—
—
—
—
—
—
Max
—
—
—
–0.1
–0.1
800
2SA1189
Min
Typ
Max
—
—
—
–0.1
–0.1
800
Unit
V
V
V
µA
µA
Test conditions
I
C
= –10
µA,
I
E
= 0
I
C
= –1 mA, R
BE
=
∞
I
E
= –10
µA,
I
C
= 0
V
CB
= –70 V, I
E
= 0
V
EB
= –2 V, I
C
= 0
V
CE
= –12 V,
I
C
= –2 mA*
2
I
C
= –10 mA,
I
B
= –1 mA*
2
–120 —
–120 —
–5
—
—
250
—
—
—
—
–0.05 –0.15 —
–0.7
130
3.2
–1.0
—
—
—
—
—
–0.05 –0.15 V
–0.7
130
3.2
–1.0
—
—
V
MHz
pF
Gain bandwidth product f
T
Collector output
capacitance
Cob
V
CE
= –6 V,
I
C
= –10 mA
V
CB
= –10 V, I
E
= 0,
f = 1 MHz
Notes: 1. The 2SA1188 and 2SA1189 are grouped by h
FE
as follows.
2. Pulse test
D
250 to 500
E
400 to 800
See characteristic curves of 2SA1190 and 2SA1191.
2
HITACHI [ HITACHI SEMICONDUCTOR ]
