2SA1171
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Ratings
–90
–90
–5
–50
150
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
–90
—
250
—
—
—
—
Typ
—
—
—
—
—
200
1.6
Max
—
–0.5
800
–0.75
–0.5
—
—
V
V
MHz
pF
Unit
V
µA
Test conditions
I
C
= –1 mA, R
BE
=
∞
V
CB
= –75 V, I
E
= 0
V
CE
= –12 V, I
C
= –2 mA
V
CE
= –12 V, I
C
= –2 mA
I
C
= –10 mA, I
B
= –1 mA
V
CE
= –12 V, I
C
= –2 mA
V
CB
= –25 V, I
E
= 0, f = 1 MHz
Collector to emitter breakdown V
(BR)CEO
voltage
Collector cutoff current
DC current transfer ratio
Base to emitter voltage
Collector to emitter saturation
voltage
Gain bandwidth product
Collector output capacitance
Note:
Grade
Mark
h
FE
D
PD
250 to 500
E
PE
400 to 800
I
CBO
h
FE
*
1
V
BE
V
CE(sat)
f
T
Cob
1. The 2SA1171 is grouped by h
FE
as follows.
See characteristic curves of 2SA872.
2
HITACHI [ HITACHI SEMICONDUCTOR ]
