2SA1121
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Ratings
–35
–35
–4
–500
150
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
–35
–35
–4
—
—
60
10
—
D
SD
160 to 320
Typ
—
—
—
—
–0.2
—
—
–0.64
Max
—
—
—
–0.5
–0.6
320
—
—
V
Unit
V
V
V
µA
V
Test conditions
I
C
= –10
µA,
I
E
= 0
I
C
= –1 mA, R
BE
=
∞
I
E
= –10
µA,
I
C
= 0
V
CB
= –20 V, I
E
= 0
I
C
= –150 mA, I
B
= –15 mA
V
CE
= –3 V, I
C
= –10 mA
V
CE
= –3 V, I
C
= –500 mA
(Pulse test)
V
CE
= –3 V, I
C
= –10 mA
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
Collector to emitter saturation
voltage
DC current transfer ratio
V
(BR)EBO
I
CBO
V
CE(sat)
h
FE
*
1
h
FE
Base to emitter voltage
Note:
Grade
Mark
h
FE
B
SB
60 to 120
C
SC
100 to 200
V
BE
1. The 2SA1121 is grouped by h
FE
as follows.
See characteristic curves of 2SA673.
2
HITACHI [ HITACHI SEMICONDUCTOR ]
