2SA1083, 2SA1084, 2SA1085
Electrical Characteristics
(Ta = 25°C)
2SA1083
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Emitter cutoff current
Symbol Min
V
(BR)CBO
–60
V
(BR)CEO
–60
V
(BR)EBO
–5
I
CBO
I
EBO
—
—
250
—
—
—
—
—
Typ
—
—
—
—
—
—
—
Max
—
—
—
–0.1
–0.1
800
–0.2
2SA1084
Min
–90
–90
–5
—
—
250
—
—
—
—
—
Typ Max
—
—
—
—
—
—
—
—
—
—
–0.1
–0.1
800
–0.2
2SA1085
Min
Typ Max
—
—
—
–0.1
–0.1
800
–0.2
V
V
Unit Test conditions
V
V
V
µA
µA
I
C
= –10
µA,
I
E
= 0
I
C
= –1 mA,
R
BE
=
∞
I
E
= –10
µA,
I
C
= 0
V
CB
= –50 V, I
E
= 0
V
EB
= –2 V, I
C
= 0
V
CE
= –12 V,
I
C
= –2 mA
I
C
= –10 mA,
I
B
= –1 mA
V
CE
= –12 V,
I
C
= –2 mA
–120 —
–120 —
–5
—
—
250
—
—
—
—
—
—
—
—
—
—
DC current transfer ratio h
FE
*
1
Collector to emitter
saturation voltage
Base to emitter voltage
V
CE(sat)
V
BE
–0.6 —
90
3.5
0.5
—
—
—
–0.6 —
90
3.5
0.5
—
—
—
–0.6 —
90
3.5
0.5
—
—
—
Gain bandwidth product f
T
Collector output
capacitance
Noise voltage reffered
to input
Cob
e
n
MHz V
CE
= –12 V,
I
C
= –2 mA
pF
nV/
√Hz
V
CB
= –10 V, I
E
= 0,
f = 1 MHz
V
CE
= –6V,
I
C
= –10 mA,
f = 1 kHz,
R
g
= 0,
∆f
= 1Hz
Note:
D
1. The 2SA1083, 2SA1084 and 2SA1085 are grouped by h
FE
as follows.
E
400 to 800
250 to 500
3
HITACHI [ HITACHI SEMICONDUCTOR ]
