2SA1025, 2SA1081, 2SA1082
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
Tj
Tstg
2SA1025
–60
–60
–5
–100
100
400
150
–55 to +150
2SA1081
–90
–90
–5
–100
100
400
150
–55 to +150
2SA1082
–120
–120
–5
–100
100
400
150
–55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
2SA1025
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Emitter cutoff current
Symbol Min
V
(BR)CBO
–60
V
(BR)CEO
–60
V
(BR)EBO
–5
I
CBO
I
EBO
—
—
250
—
—
—
—
Typ
—
—
—
—
—
—
—
Max
—
—
—
–0.1
–0.1
800
–0.2
2SA1081
Min
–90
–90
–5
—
—
250
—
—
—
—
Typ Max
—
—
—
—
—
—
—
—
—
—
–0.1
–0.1
800
–0.2
2SA1082
Min
Typ Max
—
—
—
–0.1
–0.1
800
–0.2
V
V
Unit Test conditions
V
V
µA
µA
I
C
= –10
µA,
I
E
= 0
I
C
= –1 mA,
R
BE
=
∞
I
E
= –10
µA,
I
C
= 0
V
CB
= –50 V, I
E
= 0
V
EB
= –2 V, I
C
= 0
V
CE
= –12 V,
I
C
= –2 mA
I
C
= –10 mA,
I
B
= –1 mA
V
CE
= –12 V,
I
C
= –2 mA
–120 —
–120 —
–5
—
—
250
—
—
—
—
—
—
—
—
—
DC current transfer ratio h
FE
*
1
Collector to emitter
saturation voltage
Base to emitter voltage
V
CE(sat)
V
BE
–0.6 —
90
3.5
—
—
–0.6 —
90
3.5
—
—
–0.6 —
90
3.5
—
—
Gain bandwidth product f
T
Collector output
capacitance
Cob
MHz V
CE
= –12 V,
I
C
= –2 mA
pF
V
CB
= –10 V, I
E
= 0,
f = 1 MHz
Note:
D
1. The 2SA1025, 2SA1081 and 2SA1082 are grouped by h
FE
as follows.
E
400 to 800
250 to 500
See characteristic curves of 2SA1083.
2
HITACHI [ HITACHI SEMICONDUCTOR ]
