2SA1031, 2SA1032
Electrical Characteristics
(Ta = 25°C)
2SA1031
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current trnsfer ratio
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
*
1
Min
–30
–30
–5
—
—
100
—
—
200
—
—
Typ
—
—
—
—
—
—
—
—
280
3.3
—
Max
—
—
—
–0.5
–0.5
500
–0.8
–0.2
—
4.0
5
2SA1032
Min
–55
–50
–5
—
—
100
—
—
200
—
—
Typ
—
—
—
—
—
—
—
—
280
3.3
—
Max
—
—
—
–0.5
–0.5
320
–0.8
–0.2
—
4.0
5
V
V
MHz
pF
dB
Unit
V
V
V
µA
µA
Test conditions
I
C
= –10
µA,
I
E
= 0
I
C
= –1 mA, R
BE
=
∞
I
E
= –10
µA,
I
C
= 0
V
CB
= –18 V, I
E
= 0
V
EB
= –2 V, I
C
= 0
V
CE
= –12 V,
I
C
= –2 mA
V
CE
= –12 V,
I
C
= –2 mA
I
C
= –10 mA,
I
B
= –1 mA
V
CE
= –12 V,
I
C
= –2 mA
V
CB
= –10 V, I
E
= 0,
f = 1 MHz
V
CE
= –6 V,
I
C
= –0.1 mA,
R
g
= 500
Ω,
f = 120 Hz
Base to emitter voltage V
BE
Collector to emitter
saturation voltage
V
CE(sat)
Gain bandwidth product f
T
Collector output
capacitance
Noise figure
Cob
NF
Note:
1. The 2SA1031 and 2SA1032 are grouped by h
FE
as follows.
B
C
160 to 320
160 to 320
D
250 to 500
—
100 to 200
100 to 200
2SA1031
2SA1032
3
HITACHI [ HITACHI SEMICONDUCTOR ]
