1SS88
Absolute Maximum Ratings
(Ta = 25°C)
Item
Reverse voltage
Peak forward current
Average forward current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
R
I
FM
I
O
Pd
Tj
Tstg
Value
10
35
15
150
100
−55
to +100
Unit
V
mA
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Forward voltage
Symbol
V
F1
V
F2
Reverse current
I
R1
I
R2
Capacitance
Capacitance deviation
Forward voltage
deviation
ESD-Capability *
1
Min
365
520
30
Typ
Max
430
600
0.2
10
0.97
0.1
10
10
Unit
mV
µA
pF
pF
mV
Test Condition
I
F
= 1 mA
I
F
= 10 mA
V
R
= 2 V
V
R
= 10 V
V
R
= 0 V, f = 1 MHz
V
R
= 0 V, f = 1 MHz
I
F
= 2.5 mA
I
F
= 10 mA
C = 200 pF, R = 0
Ω,
Both forward and
reverse direction 1 pulse.
C
∆C
∆V
F1
∆V
F2
V
Notes: 1. Failure criterion ; I
R
>
50
µA
at V
R
= 10 V
2. Each group shall unify a multiple of 4 diodes
Rev.1, Oct. 2000, page 2 of 5
HITACHI [ HITACHI SEMICONDUCTOR ]
