1SS86
Absolute Maximum Ratings
(Ta = 25°C)
Item
Reverse voltage
Average forward current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
R
I
O
Pd
Tj
Tstg
Value
3
30
150
100
−55
to +100
Unit
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Forward current
Reverse voltage
Reverse current
Capacitance
ESD-Capability *
Symbol
I
F
V
R
I
R
C
Min
8
3
30
Typ
Max
50
0.85
Unit
mA
V
µA
pF
V
Test Condition
V
F
= 0.5 V
I
R
= 1 mA
V
R
= 0.5 V
V
R
= 0.5 V, f = 1 MHz
C = 200 pF, R = 0
Ω,
Both forward and
reverse direction 1 pulse.
Note: Failure criterion ; I
R
>
50
µA
at V
R
= 0.5 V
Rev.2, Oct. 2000, page 2 of 5
HITACHI [ HITACHI SEMICONDUCTOR ]
