ADE-208-151A(Z)
1SS84
Silicon Epitaxial Planar Diode
for High Speed Switching
Rev. 1
Aug. 1995
Features
• Low reverse current.
• High reliability with glass seal.
Outline
Ordering Information
Type No. Cathode 2nd band
3rd band
Package
Code
1
3rd band
2nd band
Cathode band
2
1SS84
Light Blue Dark Green Dark Green
DO-35
1. Cathode
2. Anode
Absolute Maximum Ratings
(Ta = 25°C)
Item
Peak reverse voltage
Reverse voltage
Peak forward current
Non-Repetitive peak forward surge current
Average forward current
Power dissipation
Junction temperature
Storage temperature
* Within 1s forward surge current.
Symbol
V
RM
V
R
I
FM
I
FSM
*
I
o
P
d
T
j
Tstg
Value
75
70
450
1
150
250
175
-65 to +175
Unit
V
V
mA
A
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Forward voltage
Reverse current
Capacitance
Reverse recovery time
Symbol Min
V
F
I
R1
I
R2
I
R3
C
t
rr
—
—
—
—
—
—
Typ
—
0.3
—
—
—
—
Max
0.8
3
10
100
5
50
pF
ns
nA
Unit
V
Test Condition
I
F
= 10 mA
V
R
= 0.3 V
V
R
= 20 V
V
R
= 55 V
V
R
= 1 V, f = 1 MHz
I
F
=I
R
=10mA, I
rr
=1mA,R
L
=100Ω
HITACHI [ HITACHI SEMICONDUCTOR ]
