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1SS83TD 参数 Datasheet PDF下载

1SS83TD图片预览
型号: 1SS83TD
PDF下载: 下载PDF文件 查看货源
内容描述: [Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35]
分类和应用: 整流二极管开关高压
文件页数/大小: 6 页 / 29 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
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1SS83
Absolute Maximum Ratings
*
2
(Ta = 25°C)
Item
Peak reverse voltage
Reverse voltage
Peak forward current
Non-Repetitive peak forward surge current
Average forward current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
RM
*
1
V
R
I
FM
I
FSM
*
2
I
O
Pd
Tj
Tstg
Value
300
250
625
1
200
400
175
–65 to +175
Unit
V
V
mA
A
mA
mW
°C
°C
Notes: 1. Reverse voltage in excess of peak reverse voltage may deteriorate electrical characteristic.
2. Within 1s forward surge current.
Electrical Characteristics
(Ta = 25°C)
Item
Forward voltage
Reverse current
Symbol
V
F
I
R1
I
R2
Capacitance
Reverse recovery time
C
t
rr
Min
Typ
1.5
Max
1.0
0.2
100
100
pF
ns
Unit
V
µA
Test Condition
I
F
= 100mA
V
R
= 250V
V
R
= 300V
V
R
= 0V, f = 1MHz
I
F
= I
R
= 30mA, Irr = 3mA, R
L
= 100Ω
2