1SS108
Absolute Maximum Ratings
(Ta = 25°C)
Item
Reverse voltage
Average rectified current
Junction temperature
Storage temperature
Symbol
V
R
I
O
Tj
Tstg
Value
30
15
125
–55 to +125
Unit
V
mA
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Forward current
Reverse current
Capacitance
Rectifier efficiency
ESD-Capability
Symbol
I
F
I
R
C
η
—
Min
3.0
—
—
70
70
Typ
—
—
—
—
—
Max
—
100
3.0
—
—
Unit
mA
µA
pF
%
V
Test Condition
V
F
= 1V
V
R
= 10V
V
R
= 1V, f = 1MHz
Vin = 2Vrms, f = 40MHz, R
L
= 5kΩ, C
L
= 20pF
*C = 200pF, Both forward and
reverse direction 1 pulse.
Note: Failure criterion; I
R
≥
200µA at V
R
= 10V
10
–1
Forward current I
F
(A)
10
–2
10
–3
10
–4
10
–5
10
–6
0
1.2
1.6
0.4
0.8
Forward voltage V
F
(V)
2.0
Fig.1 Forward current Vs. Forward voltage
HITACHI [ HITACHI SEMICONDUCTOR ]
