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HM628512LTT-7SL 参数 Datasheet PDF下载

HM628512LTT-7SL图片预览
型号: HM628512LTT-7SL
PDF下载: 下载PDF文件 查看货源
内容描述: 524288字×8位高速CMOS静态RAM [524288-word x 8-bit High Speed CMOS Static RAM]
分类和应用: 内存集成电路静态存储器光电二极管
文件页数/大小: 15 页 / 88 K
品牌: HITACHI-METALS [ HITACHI METALS, LTD ]
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HM628512 Series
AC Characteristics
(Ta = 0 to +70°C, V
CC
= 5 V
±
10%, unless otherwise noted.)
Test Conditions
Input pulse levels: 0.8 V to 2.4 V
Input rise and fall time: 5 ns
Input and output timing reference levels: 1.5 V
Output load: 1 TTL Gate + C
L
(100 pF) (HM628512-7A/7)
1 TTL Gate + C
L
(50 pF) (HM628512-5)
(Including scope & jig)
Read Cycle
HM628512
-5
Parameter
Read cycle time
Address access time
Chip select access time
Output enable to output valid
Chip selection to output in low-Z
Output enable to output in low-Z
Symbol
t
RC
t
AA
t
CO
t
OE
t
LZ
t
OLZ
Min
55
10
5
0
0
10
Max
55
55
25
20
20
-7A
Min
65
10
5
0
0
10
Max
60
65
30
20
20
-7
Min
70
10
5
0
0
10
Max
70
70
35
25
25
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
2
2
1, 2
1, 2
Notes
Chip deselection to output in high-Z t
HZ
Output disable to output in high-Z
Output hold from address change
t
OHZ
t
OH
Notes: 1. t
HZ
and t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are
not referred to output voltage levels.
2. This parameter is sampled and not 100% tested.
7