2SJ389 L , 2SJ389 S
1000
Reverse Recovery Time trr (ns)
500
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
300
100
300
100
0
Ciss
Coss
Crss
200
100
50
20
Capacitance C (pF)
10
–0.1 –0.3
–1 –3
–10 –30 –100
Reverse Drain Current I
DR
(A)
di / dt = 50 A / µs
V
GS
= 0, Ta = 25 °C
V
GS
= 0
f = 1 MHz
–10
–20
–30
-40
–50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
V
DD
= –10 V
–25 V
–50 V
I
D
= –10 A
V
DS
V
DD
= –50 V
–25 V
–10 V
V
GS
V
GS
(V)
0
0
Switching Characteristics
1000
500
Switching Time t (ns)
200
100
50
tr
20
10
–0.1 –0.2
t d(on)
–0.5 –1 –2
–5
Drain Current I
D
(A)
–10
tf
V
GS
= –10 V, V
DD
= –30 V
PW = 5 µs, duty < 1 %
t d(off)
–20
–4
Drain to Source Voltage
–40
–8
–60
–12
–80
–16
–20
100
–100
0
80
20
40
60
Gate Charge Qg (nc)
Gate to Source Voltage
HITACHI-METALS [ HITACHI METALS, LTD ]
