Capsule Type Rectifier Diode SHXXC760
Symbol
Characteristics
Conditions
T
J
(
0
C)
Value
Unit
BLOCKING PARAMETERS
V
RRM
I
RRM
Repetitive peak reverse voltage
Repetitive peak reverse current
180
180
200-600
25
V
mA
V = V
RRM
CONDUCTING PARAMETERS
I
F(AV)
I
RMS
I
FSM
I
2
t
V
FM
V
0
r
0
Average on-state current
RMS on-state current
Non repetitive peak surge on-
state current
Permissible surge energy
Peak on-state voltage drop
Typical forward conduction
Threshold voltage
Typical forward slope resistance
Sine wave, 10mS
without reverse
voltage
On-state
current = 2000A
180
361
180
180
180
1.39
0.70
0.30
kA
2
S
V
V
mΩ
180 sine, 50H
Z
,
T
C
= 104
0
C
760
1200
8500
A
A
A
THERMAL & MECHANICAL PARAMETERS
Thermal impedance, 180
0
conduction, Sine
Thermal impedance
Maximum Permissible junction
temperature
Storage temperature range
Mounting Torque
Weight
R
TH (J-C)
R
TH (C-HK)
T
J
T
STG
F
W
Junction to case
Case to heatsink
0.079
0.015
180
-40 – 180
6.5
70
0
C/W
C/W
0
0
C
C
0
KN
gms
HIND RECTIFIERS LTD
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HIRECT [ HIND RECTIFIERS LIMITED. ]
