PHASE CONTROL THYRISTOR H55TBXX
Symbol
Characteristics
Conditions
T
J
(
0
C)
Value
Unit
BLOCKING PARAMETERS
V
RRM
V
DRM
I
RRM
I
DRM
d
V
/d
T
Repetitive peak reverse voltage
Repetitive peak off-stage
voltage
Repetitive peak reverse current
Repetitive peak off-state current
Rep. rate of change of voltage
125
125
V = V
RRM
V = V
RRM
@ 67%V
DRM
125
125
125
200-1600
200-1600
10
10
600
V
V
mA
mA
V/μS
CONDUCTING PARAMETERS
I
F(AV)
I
RMS
I
TSM
It
2
Average on-state current
RMS on-state current
Surge on-state current
It
2
180 sine, 50H
Z
,
T
C
= 75
0
C
Sine wave,
10mS without
reverse voltage
On-state
current = 175A
55
85
125
125
125
125
900
4050
1.82
0.90
4.35
120
A
A
A
A
2
S
V
V
mΩ
A/μS
V
T
V
0
R
0
di/dt
Peak on-state voltage drop
Threshold voltage
On-state slope resistance
Repetitive rate of rise of current
d
IG
/d
T
= 1A/µS
V
GK
= 1V
125
TRIGGERING PARAMETERS
I
GT
V
GT
I
L
I
H
P
G –PEAK
di/dt
V
FGM
I
FGM
Gate trigger current
Gate trigger voltage
Latching Current
Holding Current
Maximum Peak Gate Power
Repetitive rate of rise of current
Maximum forward gate voltage
Maximum forward gate current
Thermal impedance, 180
conduction, Sine
Thermal impedance
Maximum Permissible junction
temperature
Storage temperature range
Mounting Torque
Weight
V
D
= 5V
V
D
= 5V
V
D
= 5V
Pulse width
100μSec
25
25
25
25
150
2.50
400
300
30
120
12
10
mA
V
mA
mA
W
A/μS
V
A
THERMAL & MECHANICAL PARAMETERS
R
TH (J-C)
R
TH (C-HK)
T
J
T
STG
F
W
Junction to case
Case to heatsink
0.60
0.20
125
-40 - 125
4
45
0
0
C/W
C/W
0
0
C
C
NM
gms
HIND RECTIFIERS LTD
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HIRECT [ HIND RECTIFIERS LIMITED. ]
