GD40PIT120C5S
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
Q
G
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate charge
V
CE
=30V,f=1Mhz,
V
GE
=0V
V
CC
=600V,I
C
=50A,
V
GE
=15V
T
P
≤10μs,V
GE
=15V,
T
j
=125℃,V
CC
=900V,
V
CEM
≤1200V
V
CC
=600V,I
C
=40A,
R
G
=33Ω,V
GE
=±15V,
T
j
=125℃
495
110
550
400
6.24
0.23
0.15
290
IGBT Module
ns
ns
ns
ns
nF
nF
nF
nC
I
SC
SC Data
500
A
DIODE-inverter
T
C
=25℃ unless otherwise noted
Maximum Rated Values
Symbol
V
RRM
I
F
I
FRM
I
2
t
Description
Repetitive Peak Reverse Voltage
DC Forward Current
Repetitive Peak Forward Current
I
2
t-value,V
R
=0V,t
p
=10ms,T
j
=125℃
t
p
=1ms
@ T
j
=25℃
GD40PIT120C5S
1200
40
80
330
Units
V
A
A
A
2
s
Characteristics Values
Symbol
V
F
Q
r
I
RM
E
rec
Parameter
Diode Forward
Voltage
Recovered Charge
Peak Reverse
Recovery Current
Reverse Recovery
Energy
Test Conditions
I
F
=40A,V
GE
=0V
T
j
=25℃
T
j
=125℃
T
j
=25℃
I
F
=40A,
V
R
=600V,
di/dt=-410A/μs,
V
GE
=-15V
T
j
=125℃
T
j
=25℃
T
j
=125℃
T
j
=25℃
T
j
=125℃
Min.
Typ.
2.10
2.00
4.0
8.0
19.5
20.0
1.49
3.00
Max.
2.45
Units
V
μC
A
mJ
HB [ HB ELECTRONIC COMPONENTS ]
