GD100FFL120C6S
IGBT Module
Absolute Maximum Ratings
T
C
=25℃ unless otherwise noted
Symbol
V
CES
V
GES
I
C
I
CM(1)
I
F
I
FM
P
D
T
SC
T
j
T
STG
I
2
t-value, Diode
V
ISO
Mounting
Torque
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
@ T
C
=25℃
@ T
C
=80℃
@ T
C
=80℃
GD100FFL120C6S
1200
±20V
140
100
200
100
200
481
10
-40 to +150
-40 to +125
1950
2500
3.0 to 6.0
Units
V
V
A
A
A
A
W
μs
℃
℃
A
2
s
V
N.m
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum power Dissipation @ T
j
=150℃
Short Circuit Withstand Time @ T
j
=125℃
Operating Junction Temperature
Storage Temperature Range
V
R
=0V, t=10ms, T
j
=125℃
Isolation Voltage RMS, f=50Hz, t=1min
Mounting Screw:M5
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature
Electrical Characteristics of IGBT
T
C
=25℃ unless otherwise noted
Off Characteristics
Symbol
BV
CES
I
CES
I
GES
Parameter
Collector-Emitter
Breakdown Voltage
Collector Cut-Off Current
Gate-Emitter Leakage
Current
Test Conditions
T
j
=25℃
V
CE
=V
CES
,V
GE
=0V,
T
j
=25℃
V
GE
=V
GES
,V
CE
=0V,
T
j
=25℃
Min.
1200
5.0
400
Typ.
Max.
Units
V
mA
nA
On Characteristics
Symbol
V
GE(th)
Parameter
Gate-Emitter Threshold
Voltage
Collector to Emitter
Saturation Voltage
Test Conditions
I
C
=4.0mA,V
CE
=V
GE
,
T
j
=25℃
I
C
=100A,V
GE
=15V,
T
j
=25℃
I
C
=100A,V
GE
=15V,
T
j
=125℃
Min.
5.0
Typ.
6.2
1.9
V
2.1
Max.
7.0
Units
V
V
CE(sat)
2/9
Rev.A
HB [ HB ELECTRONIC COMPONENTS ]
