IRF510, IRF511, IRF512, IRF513
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRF510
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
=
20kΩ)
(Note 1). . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . E
AS
Operating and Storage Temperature Range. . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from 25ase for 10s . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . .T
pkg
100
100
5.6
4
20
±20
43
0.29
19
-55 to 175
300
260
IRF511
80
80
5.6
4
20
±20
43
0.29
19
-55 to 175
300
260
IRF512
100
100
4.9
3.4
18
±20
43
0.29
19
-55 to 175
300
260
IRF513
80
80
4.9
3.4
18
±20
43
0.29
19
-55 to 175
300
260
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
TEST CONDITIONS
V
GS
= 0V, I
D
= 250µA, (Figure 10)
100
80
V
GS(TH)
I
DSS
V
GS
= V
DS
, I
D
= 250µA
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V T
J
= 150
o
C
2.0
-
-
-
-
-
-
-
-
-
4.0
25
250
V
V
V
µA
µA
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
IRF510 IRF512
IRF511, IRF513
Gate to Threshold Voltage
Zero-Gate Voltage Drain Current
On-State Drain Current (Note 2)
IRF510, IRF511
IRF512, IRF513
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
IRF510, IRF511
IRF512, IRF513
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
I
D(ON)
V
DS
> I
D(ON) x
r
DS(ON)MAX,
V
GS
= 10V,
(Figure 7)
5.6
4.9
-
-
-
-
-
±100
A
A
nA
I
GSS
r
DS(ON)
V
GS
=
±20V
V
GS
= 10V, I
D
= 3.4A, (Figures 8, 9)
-
-
-
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
V
GS
= 10V, I
D
= 5.6A, V
DS
= 0.8 x Rated BV
DSS
,
I
G(REF)
= 1.5mA (Figures 14, 19, 20)
Gate charge is essentially independent of
operating temperature
V
GS
= 50V, I
D
= 3.4A, (Figure 12)
I
D
≈
5.6A, R
GS
= 24Ω , V = 50V, R
L
= 9Ω
DD
V
DD
= 50V, V
GS
= 10V, (Figures 17, 18)
MOSFET switching times are essentially
independent of operating temperature
1.3
-
-
-
-
-
0.4
0.5
2.0
8
25
15
12
5.0
0.54
0.74
-
11
36
21
21
7.7
Ω
Ω
S
ns
ns
ns
ns
nC
-
-
2.0
3.0
-
-
nC
nC
5-2
HARRIS [ HARRIS CORPORATION ]
