IRF510, IRF511, IRF512, IRF513
Typical Performance Curves
Unless Otherwise Specified
80µs PULSE TEST
V
GS
= 10V
I
D
, DRAIN CURRENT (A)
8
V
GS
= 8V
6
V
GS
= 7V
4
V
GS
= 6V
2
V
GS
= 5V
0
V
GS
= 4V
0
2
4
6
8
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
10
I
D(ON)
, ON-STATE DRAIN CURRENT (A)
10
(Continued)
10
V
DS
≥
50V
80µs PULSE TEST
1
T
J
= 175
o
C
T
J
= 25
o
C
0.1
10
-2
0
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
5.0
80µs PULSE TEST
NORMALIZED ON RESISTANCE
r
DS(ON)
, DRAIN TO SOURCE
4.0
ON RESISTANCE (Ω)
3.0
I
D
= 3.4A
V
GS
= 10V
2.4
3.0
1.8
2.0
V
GS
= 10V
V
GS
= 20V
1.0
1.2
0.6
0
0
4
8
12
16
20
0
-60 -40
-20
0
20
40
60
80
100 120 140 160 180
I
D,
DRAIN CURRENT (A)
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.25
I
D
= 250µA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
1.15
500
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
400 C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
300
1.05
0.95
C, CAPACITANCE (pF)
200
C
ISS
C
OSS
0.85
100
C
RSS
0.75
-60 -40 -20
0
20
40
60
80
100 120 140 160 180
0
1
2
T
J
, JUNCTION TEMPERATURE (
o
C)
2
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
5
10
10
2
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5-5
HARRIS [ HARRIS CORPORATION ]
