IRF510, IRF511, IRF512, IRF513
Electrical Specifications
PARAMETER
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Internal Drain Inductance
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
C
ISS
C
OSS
C
RSS
L
D
Measured From the
Contact Screw On Tab
To Center of Die
Measured From the
Drain Lead, 6mm
(0.25in) From Package
to Center of Die
Internal Source Inductance
L
S
Measured From The
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
L
D
G
L
S
S
TEST CONDITIONS
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz, (Figure 11)
MIN
-
-
-
-
TYP
135
80
20
3.5
MAX
-
-
-
-
UNITS
pF
pF
pF
nH
-
4.5
-
nH
-
7.5
-
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
θJC
R
θJA
Free air operation
-
-
-
-
3.5
80
o
C/W
o
C/W
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
I
SD
I
SDM
Test Conditions
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
D
MIN
-
-
TYP
-
-
MAX
5.6
20
UNITS
A
A
G
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
NOTES:
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= 5.6A, V
GS
= 0V (Figure 13)
T
J
= 25
o
C, I
SD
= 5.6A, dI
SD
/d
t
= 100A/µs
T
J
= 25
o
C, I
SD
= 5.6A, dI
SD
/d
t
= 100A/µs
-
4.6
0.17
-
96
0.4
2.5
200
0.83
V
ns
µC
2. Pulse test: pulse width
≤
300µs, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 25V, start T
J
= 25
o
C, L = 910µH, R
G
= 25Ω, peak I
AS
= 5.6A (See Figure 15, 16).
5-3
HARRIS [ HARRIS CORPORATION ]
