HA-5004
Typical Performance Curves
8
7
6
e
N
(nV/
√
Hz)
i
N
(pA/
√
Hz)
5
4
3
2
1
0
10
100
1K
FREQUENCY (Hz)
10K
100K
V
SUPPLY
=
±15V,
T
A
= 25
o
C, Unless Otherwise Specified
(Continued)
55
50
45
40
35
30
25
20
15
10
5
0
10
100
1K
FREQUENCY (Hz)
10K
100K
V
CC
=
±
15V
V
CC
=
±
15V
FIGURE 9. NOISE VOLTAGE vs FREQUENCY
FIGURE 10. NOISE CURRENT vs FREQUENCY
Die Characteristics
DIE DIMENSIONS:
63 mils x 93 mils x 19 mils
1600µm x 2370µm x 483µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16k
Å
±2k
Å
PASSIVATION:
Type: Nitride (Si
3
N
4
) over (Silox, 5% Phos.)
Silox Thickness: 12k
Å
±2k
Å
Nitride Thickness: 3.5k
Å
±1.5k
Å
SUBSTRATE POTENTIAL (Powered Up):
V
EE
TRANSISTOR COUNT:
64
PROCESS:
Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5004
OE
TOI
GND
TOL
V+
IN
FB
-BAL
+BAL
V-
VC-
VC+
OUT
8
HARRIS [ HARRIS CORPORATION ]
