欢迎访问ic37.com |
会员登录 免费注册
发布采购

HMNR5128DV-85 参数 Datasheet PDF下载

HMNR5128DV-85图片预览
型号: HMNR5128DV-85
PDF下载: 下载PDF文件 查看货源
内容描述: 5.0或3.3V , 4兆位( 512千位×8 ) TIMEKEEPER NVSRAM [5.0 or 3.3V, 4 Mbit (512 Kbit x 8) TIMEKEEPER NVSRAM]
分类和应用: 静态存储器
文件页数/大小: 13 页 / 274 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
 浏览型号HMNR5128DV-85的Datasheet PDF文件第5页浏览型号HMNR5128DV-85的Datasheet PDF文件第6页浏览型号HMNR5128DV-85的Datasheet PDF文件第7页浏览型号HMNR5128DV-85的Datasheet PDF文件第8页浏览型号HMNR5128DV-85的Datasheet PDF文件第10页浏览型号HMNR5128DV-85的Datasheet PDF文件第11页浏览型号HMNR5128DV-85的Datasheet PDF文件第12页浏览型号HMNR5128DV-85的Datasheet PDF文件第13页  
HANBit  
HMNR5128D(V)  
Power Down/Up Mode AC Waveforms  
Power Down/Up AC Characteristics  
Symbol  
Parameter  
VPFD (max) to VPFD (min) VCC Fall Time  
HMNR5128D  
HMNR5128DV  
VPFD (min) to VPFD (max) VCC Rise Time  
Min  
300  
10  
Max  
Unit  
uS  
uS  
uS  
uS  
uS  
uS  
(2)  
tF  
(3)  
tFB  
VPFD (min) to VSS VCC Fall Time  
150  
10  
tR  
(4)  
tREC  
VPFD (max) to RST High  
40  
200  
tRB  
VSS to VPFD (min) VCC Rise Time  
5
Note :  
1. Valid for Ambient Operating Temperature: TA = 0 to 70°C; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where noted).  
2. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200µs after  
VCC passes VPFD (min).  
3. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.  
Power Down/Up Trip Points DC Characteristics  
Symbol  
Parameter(1,2)  
Min  
4.2  
2.7  
Typ  
4.35  
Max  
4.5  
Unit  
HMNR5128D  
HMNR5128DV  
HMNR5128DV  
HMNR5128DV  
V
VPFD  
Power-fail Deselect Voltage  
2.9  
3.0  
V
3.0  
V
V
Battery Back-up Switchover  
Voltage  
VSO  
VPFD-100mV  
(3)  
TDR  
Expected Data Retention Time  
10  
YEARS  
Note: 1. All voltages referenced to VSS  
.
2. Valid for Ambient Operating Temperature: TA = 0 to 70°C; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where noted).  
3. At 25°C.  
URL : www.hbe.co.kr  
Rev. 2.0 (March, 2002)  
9
HANBit Electronics Co.,Ltd