HANBit
HMF8M8M4G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VIN,OUT
VCC
RATING
Voltage with respect to ground all other pins
Voltage with respect to ground Vcc
Storage Temperature
-2.0V to +7.0V
-2.0V to +7.0V
o o
-65 C to +125 C
TSTG
TA
o
o
Operating Temperature
-55 C to +125 C
Power Dissipation
PD
4W
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
MIN
TYP.
MAX
PARAMETER
Vcc for ± 10% device Supply Voltages
Ground
Vcc
VSS
4.5V
0
5.5V
0
0
o
o
70 C ; Vcc = 5V 0.5V )
£ ±
DC AND OPERATING CHARACTERISTICS (0 C
T
£
A
TEST CONDITIONS
SYMBOL
MIN
MAX
UNITS
PARAMETER
Input Leakage Current
Vcc=Vcc max, VIN= GND to Vcc
IL1
IL0
±1.0
±1.0
mA
mA
V
Output Leakage Current
Output High Voltage
Vcc=Vcc max, VOUT= GND to Vcc
IOH = -2.5mA, Vcc = Vcc min
IOL = 12mA, Vcc =Vcc min
/CE = VIL, /OE=VIH,
VOH
VOL
ICC1
2.4
Output Low Voltage
0.45
40
V
Vcc Active Current for Read(1)
Vcc Active Current for Program
or Erase(2)
mA
/CE = VIL, /OE=VIH
/CE= VIH
ICC2
60
mA
Vcc Standby Current
ICC3
1.0
4.2
mA
V
Low Vcc Lock-Out Voltage
VLKO
3.2
Notes
:
1. The Icc current listed is typically less than 2mA/MHz, with /OE at VIH.
2. Icc active while embedded algorithm (program or erase) is in progress
3. Maximum Icc current specifications are tested with Vcc=Vcc max
ERASE AND PROGRAMMING PERFORMANCE
LIMITS
PARAMETER
UNIT
COMMENTS
MIN.
TYP.
MAX.
Excludes 00H programming
prior to erasure
Sector Erase Time
-
1
8
sec
3
URL: www.hbe.co.kr
REV.02(August,2002)
HANBit Electronics Co., Ltd.
HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
