Si photodiode S5493-01, etc.
ꢀꢀSpectral response
ꢀꢀRise time vs. load resistance
(Typ. Ta=25 ˚C, VR=0 V)
(Typ. Ta=25 ˚C)
1 ms
0.7
S5493-01
S2833-01
S4011-04
0.6
0.5
100 µs
S2833-01
S6931
10 µs
0.4
0.3
0.2
0.1
0
S4797-01
1 µs
S5627-01
S5493-01
S5627-01
S6931
S4011-04
100 ns
10 ns
S4797-01
102
103
104
105
200
400
600
800
1000
LOAD RESISTANCE (Ω)
WAVELENGTH (nm)
KSPDB0130EC
KSPDB0129EB
ꢀꢀDark current vs. reverse voltage
ꢀꢀShunt resistance temperature characteristics
(Typ. VR=10 mV)
(Typ. Ta=25 ˚C)
S5493-01
10 TΩ
1 TΩ
1 nA
S4011-04
S2833-01
100 pA
S4797-01
S5627-01
100 GΩ
10 GΩ
1 GΩ
S6931
10 pA
S4797-01
S6931
1 pA
S5627-01
100 MΩ
10 MΩ
1 MΩ
S2833-01
S5493-01
100 fA
S4011-04
100 kΩ
10 fA
0.01
-20
0
20
40
60
80
0.1
1
10
AMBIENT TEMPERATURE (˚C)
REVERSE VOLTAGE (V)
KSPDB0131EB
KSPDB0132EB
2
HAMAMATSU [ HAMAMATSU CORPORATION ]
