InGaAs PIN photodiode
I
Spectral response
(Typ.)
1.4
1.2
G8421/G8371/G5851 series
I
Photo sensitivity temperature characteristic
(Typ.)
2
1.0
0.8
T=25 ˚C
TEMPERATURE COEFFICIENT (%/˚C)
PHOTO SENSITIVITY (A/W)
1
0.6
T= -10 ˚C
0.4
0.2
0
0.8
0
T= -20 ˚C
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-1
0.8
1
1.2
1.4
1.6
1.8
2
2.2 2.4
2.6
WAVELENGTH (µm)
KIRDB0221EA
WAVELENGTH (µm)
KIRDB0208EA
I
Dark current vs. reverse voltage
Non-cooled type
10
µA
(Typ. Ta=25 ˚C)
1
µA
G5851-23 (T= -20 ˚C)
TE-cooled type
(Typ.)
G5851-13 (T= -10 ˚C)
1
µA
G8371-03
100 nA
DARK CURRENT
DARK CURRENT
G8371-01
100 nA
G5851-21
(T= -20 ˚C) G5851-11 (T= -10 ˚C)
10 nA
10 nA
G8421-05
G8421-03
1 nA
G5851-103 (T= -10 ˚C)
G5851-203 (T= -20 ˚C)
1 nA
0.01
0.1
1
10
100 pA
0.01
0.1
1
10
REVERSE VOLTAGE (V)
KIRDB0232EB
REVERSE VOLTAGE (V)
KIRDB0223EA
I
Terminal capacitance vs. reverse voltage
10 nF
(Typ. Ta=25 ˚C, f=1 MHz)
I
Shunt resistance vs. element temperature
10 MΩ
(Typ. V
R
=10 mV)
G8421-03
G5851-103/-203
1 MΩ
G8421-05
G8371-03
G5851-13/-23
TERMINAL CAPACITANCE
G8371-01
G5851-11/-21
100 pF
SHUNT RESISTANCE
1 nF
100 kΩ
G8371-01
G5851-11/-21
10 kΩ
G8371-03
G5851-13/-23
1 kΩ
10 pF
G8421-05
G8421-03
G5851-103/-203
1 pF
0.1
1
10
100
Ω
-40
-20
0
20
40
60
80
90
100
REVERSE VOLTAGE (V)
KIRDB0233EA
ELEMENT TEMPERATURE (˚C)
KIRDB0234EA
2
HAMAMATSU [ HAMAMATSU CORPORATION ]
