InGaAs PIN photodiode
s
Spectral response
1.2
(Typ. Ta=25 ˚C)
G8370-81/-82/-83/-85
(Typ. Ta=25
˚C
)
s
Photo sensitivity temperature characteristic
2
PHOTO SENSITIVITY (A/W)
1.0
TEMPERATURE COEFFICIENT (%/˚C)
0.8
1
0.6
0.4
0
0.2
0
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-1
0.8
1.0
1.2
1.4
1.6
1.8
WAVELENGTH (µm)
KIRDB0374EA
WAVELENGTH (µm)
KIRDB0042EA
s
Photo sensitivity linearity
102
(Typ. Ta=25 ˚C,
λ=1.3 µm,
R
L
=2
Ω,
V
R
=0 V)
s
Terminal capacitance vs. reverse voltage
(Typ. Ta=25
˚C
, f=1 MHz)
10 nF
G8370-85
G8370-83
RELATIVE SENSITIVITY (%)
100
TERMINAL CAPACITANCE
G8370-81
1 nF
G8370-82
98
G8370-82
96
100 pF
G8370-81
94
G8370-85
92
G8370-83
10 pF
90
0
2
4
6
8
10
12
14
16
1 pF
0.01
0.1
1
10
100
INCIDENT LIGHT LEVEL (mW)
KIRDB0298EA
REVERSE VOLTAGE (V)
KIRDB0299EA
s
Shunt resistance vs. ambient temperature
10 GΩ
(Typ. V
R
=10 mV)
G8370-81
1 GΩ
SHUNT RESISTANCE
G8370-82
100 MΩ
G8370-83
10 MΩ
G8370-85
1 MΩ
100 kΩ
-40
-20
0
20
40
60
80
100
AMBIENT TEMPERATURE (˚C)
KIRDB0300EA
2
HAMAMATSU [ HAMAMATSU CORPORATION ]
