InGaAs PIN photodiode
s
Terminal capacitance vs. reverse voltage
(Typ. Ta=25
˚C
, f=1 MHz)
G8370-05
G8370-03
G8370 series
s
Shunt resistance vs. ambient temperature
(Typ. V
R
=10 mV)
10 nF
10 GΩ
G8370-01
1 GΩ
TERMINAL CAPACITANCE
SHUNT RESISTANCE
1 nF
G8370-02
G8370-02
100 MΩ
100 pF
G8370-01
10 pF
G8370-03
10 MΩ
G8370-05
1 MΩ
1 pF
0.01
0.1
1
10
100
100 kΩ
-40
-20
0
20
40
60
80
100
REVERSE VOLTAGE (V)
KIRDB0247EA
AMBIENT TEMPERATURE (˚C)
KIRDB0248EA
s
Dimensional outlines (unit: mm)
➀
G8370-01
5.4 ± 0.2
4.7 ± 0.1
WINDOW
2.2 MIN.
➁
G8370-02/-03
9.2 ± 0.2
8.3 ± 0.1
2.5 ± 0.2
0.4 MAX.
0.45
LEAD
2.5 ± 0.2
13 MIN.
0.45
LEAD
5.1 ± 0.3
1.5 MAX.
CASE
CASE
KIRDA0154EC
18 MIN.
PHOTOSENSITIVE
SURFACE
2.7 ± 0.2
PHOTOSENSITIVE
SURFACE
4.9 ± 0.2
3.7 ± 0.2
WINDOW
4.5 MIN.
KIRDA0155EB
3
HAMAMATSU [ HAMAMATSU CORPORATION ]
