ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) , G7096 SERIES (InGaAs)
G4176 SERIES
ABSOLUTE MAXIMUM RATINGS (Ta=25°
C
)
Item
Maximum Bias Voltage
Maximum Light Input
Pulsed Light
CW to Pulsed Light
Operating Temperature T
op(a)
Storage Temperature
T
stg
Symbol
ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25°
C
, V
b
=7V)
Unit
V
Radiant sensitivity
S
I
d
λ
= 850 nm
λ
= 850 nm
Item
Symbol
Condition
Value
10
V
b
Condition
Min.
0.2
-
Value
Typ.
0.3
100
Max.
-
300
Unit
A/W
pA
W/Hz
1/2
Φ
Pulse width
Pulse width
1ns
1ns
50
5
-40 to +85
-40 to +100
mW
mW
Dark Current
NEP*
G4176
G4176-01
Terminal Capacitance
G4176**
°
C
°
C
0.2
X
10
-15
3
X
10
-15
0.2
X
10
-15
4
X
10
-15
-
-
GENERAL CHARACTERISTICS (Ta=25°
C
)
Item
Spectral Response Range
Peak Response Wavelength
Effective Sensitive Area
Chip Size
Package
G4176
G4176-01
(Unified with SMA connector)
C
t
-
-
0.3
0.5
0.4
0.6
pF
Symbol
Condition
V
b
= 7 V
V
b
= 7 V
Value
450 to 870
850
0.2
1
0.2
1
Unit
nm
nm
mm
2
G4176-01
Rise Time
G4176
G4176-01
Fall Time
G4176
t
f
90 to 10 %
t
r
10 to 90 %
λ
λ
p
A
-
-
30
50
40
80
ps
mm
2
-
-
30
50
40
80
ps
TO-5
G4176-01
*
Noise Equivalent Power
**
Value on Chip
TO-18
Figure 1: Optical Pulse Response
G4176
(Including time response of light source, bias-tee and oscilloscope)
1.1
1.0
0.9
G4176-01
(Including time response of light source, assembly circuit and oscilloscope)
1.1
1.0
0.9
(V
b
= 7 V)
(V
b
= 7 V)
Output (arb. unit)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Output (arb. unit)
0.8
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Time (0.1ns/div)
Time (0.1ns/div)
Figure 2: Spectral Response
10
0
(V
b
= 7 V)
Radiant Sensitivity (A/W)
10
-1
10
-2
10
-3
300
400
500
600
700
800
900
1000
Wa elength (nm)
HAMAMATSU [ HAMAMATSU CORPORATION ]
