PHOTODIODE
InGaAs PIN photodiode array
G7150/G7151-16
16-element array
Features
Applications
l
16-element array
l
For simple measurement
l
Near Infrared (NIR) spectrophotometer
s
General ratings
Parameter
Package
Active area
G7150-16
DIP
0.45 × 1 (× 16 elements)
0.08 × 0.2 (× 16 elements)
G7151-16
Unit
-
mm
s
Absolute maximum ratings (Ta=25
°C)
Parameter
Reverse voltage
Operating temperature
Storage temperature
* No condensation
Symbol
V
R
Topr
Tstg
Value
5
-25 to +70 *
-25 to +70 *
Unit
V
°C
°C
s
Electrical and optical characteristics (Ta=25
°C,
per 1 element)
Parameter
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Dark current
Cut-off frequency
Terminal capacitance
Shunt resistance
Detectivity
Noise equivalent power
Symbol
λ
λp
S
I
D
fc
Ct
Rsh
D
∗
NEP
λ=1.3
µm
λ=1.55
µm
V
R
=1 V
V
R
=1 V, R
L
=50
Ω
λ=1.3
µm, -3 dB
V
R
=1 V, f=1 MHz
V
R
=10 mV
λ=λp
λ=λp
Condition
Min.
-
-
0.8
0.85
-
-
-
-
-
-
G7150-16
Typ.
0.9 to 1.7
1.55
0.9
0.95
5
30
100
100
5 × 10
12
2 × 10
-14
Max.
-
-
-
-
25
-
-
-
-
-
Min.
-
-
0.8
0.85
-
-
-
-
-
-
G7151-16
Typ.
0.9 to 1.7
1.55
0.9
0.95
0.2
300
10
1000
5 × 10
12
3 × 10
-15
Max.
-
-
-
-
1
-
-
-
-
-
Unit
µm
µm
A/W
nA
MHz
pF
MΩ
cm·Hz
1/2
/W
W/Hz
1/2
G7150/G7151-16 may be damaged by Electro Static Discharge, etc. Be carefull when using G7150/G7151-16.
1
HAMAMATSU [ HAMAMATSU CORPORATION ]
