InGaAs PIN photodiode G8421/G8371/G5851 series
ꢀ
ꢀ
Spectral response
Photo sensitivity temperature characteristic
(Typ.)
(Typ.)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
2
T=25 ˚C
1
T= -10 ˚C
0
T= -20 ˚C
1.6
-1
0.8
0.8
1.0
1.2
1.4
1.8
2.0
2.2
1
1.2 1.4 1.6 1.8
2
2.2 2.4 2.6
WAVELENGTH (µm)
WAVELENGTH (µm)
KIRDB0221EA
KIRDB0208EA
ꢀ
Dark current vs. reverse voltage
Non-cooled type
TE-cooled type
(Typ. Ta=25 ˚C
)
(Typ.)
G5851-13 (T= -10 ˚C
10 µA
1 µA
100 nA
10 nA
)
G5851-23 (T= -20 ˚C
)
1 µA
G8371-03
G5851-21
(T= -20 ˚C
G5851-11 (T= -10 ˚C
)
G8371-01
)
100 nA
G8421-03
10 nA
1 nA
G8421-05
1 nA
G5851-103 (T= -10 ˚C
G5851-203 (T= -20 ˚C
0.1
)
)
100 pA
0.01
0.1
1
10
0.01
1
10
REVERSE VOLTAGE (V)
REVERSE VOLTAGE (V)
KIRDB0232EB
KIRDB0223EA
ꢀ
ꢀ
Shunt resistance vs. element temperature
Terminal capacitance vs. reverse voltage
(Typ. Ta=25 ˚C, f=1 MHz)
(Typ. VR=10 mV)
10 nF
10 MΩ
G8421-03
G5851-103/-203
G8371-03
G5851-13/-23
1 MΩ
100 kΩ
10 kΩ
G8421-05
1 nF
G8371-01
G5851-11/-21
G8371-01
G5851-11/-21
100 pF
10 pF
G8371-03
G5851-13/-23
G8421-05
1 kΩ
G8421-03
G5851-103/-203
1 pF
100 Ω
0.1
1
10
-40
-20
0
20
40
60
80
90
100
ELEMENT TEMPERATURE (˚C)
REVERSE VOLTAGE (V)
KIRDB0233EA
KIRDB0234EA
2
HAMAMATSU [ HAMAMATSU CORPORATION ]
