InGaAs PIN photodiodes
G12183 series
Electrical and optical characteristics (Typ., unless otherwise noted)
Measurement
Condition
Cutoff
frequency capacitance
Terminal
P
eak
Photo-
sensitivity current
Dark
Shunt
resistance
Rsh
Noize
equivalent power
NEP
Detectivity
D*
λ=λp
Spectral sensi-
response tivity
Temp.
coefficient
of ID
fc
Ct
VR=0 V
f=1 MHz
S
ID
range
λ
wave-
length
λp
VR=0 V
RL=50 Ω
Element
temperature
Type no.
λ=λp VR=0.5 V
VR=10 mV
λ=λp
VR=0.5 V
Min. Typ. Typ. Max.
Min. Typ. Typ. Max. Min. Typ. Min. Typ.
Typ.
Max.
(°C)
25
(μm) (μm) (A/W) (A/W)
(μ
A) (μ
A)
(MHz) (MHz) (pF) (pF) (kΩ) (kΩ) (cm·Hz1/2/W) (cm·Hz1/2/W) (W/Hz1/2) (W/Hz1/2
)
G12183-003K
G12183-005K
G12183-010K
G12183-020K
G12183-030K
G12183-103K
G12183-105K
G12183-110K
G12183-120K
G12183-130K
G12183-203K
G12183-205K
G12183-210K
G12183-220K
G12183-230K
0.4
1
3
4
10
30
20
5
2
50
20
6
50
100
20
10
100
50
4 × 10-13 9 × 10-13
140 300
500 1000 2.8
5 × 10-13 1.5 × 10-12
0.9 to 2.6
14 3 × 1010 9 × 1010 1 × 10-12 3 × 10-12
10 100
30 300
0.12 1.2
1
1.5 1800 3000 0.65
0.8 4000 5000 0.25 1.4
3
2 × 10-12 5 × 10-12
3 × 10-12 8 × 10-12
1 × 10-13 3 × 10-13
1.5 × 10-13 4.5 × 10-13
0.5
20
5
2
1
0.5
20
5
2
1
70
25
7
44
100 200 1000
0.3
0.9
3
3
9
30
90
120 300 100 500
440 1000 28
1500 3000 6.5
-10
-20
0.9 to 2.57
0.9 to 2.55
140 1 × 1011 3 × 1011 2.5 × 10-13 8 × 10-13
30
14
2.3
1
1.3
1.035
2
5.5 × 13-13 2 × 10-12
8.5 × 10-13 2.5 × 10-12
7 × 10-14 2 × 10-13
1 × 10-13 3 × 10-13
9
0.9 3400 5000 2.8
0.085 0.85
0.21 2.1
0.65 6.5
2.1 21
75
28
8
40
100 400 2000
110 300 200 1000
400 1000 55
280 1.5 × 1011 4.5 × 1011 2 × 10-13 5.5 × 10-13
60
28
2.3 1400 3000 13
3200 5000 5.5
4 × 10-13 1 × 10-12
6 × 10-13 2 × 10-12
6
60
0.5
1
Spectral response
Photosensitivity temperature characteristics
(Typ. VR=0 V)
(Typ.)
1.4
2
Td=25 ˚C
Td=-10 ˚C
Td=-20 ˚C
1.2
1.0
0.8
0.6
0.4
1
0
0.2
0
-1
0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
Wavelength (μm)
Wavelength (μm)
KIRDB0206EA
KIRDB0491EC
2
HAMAMATSU [ HAMAMATSU CORPORATION ]
