G12180-010A 参数 Datasheet PDF下载

InGaAs PIN photodiodes

G12180 series

Photosensitive area from

ϕ0.3

mm to

ϕ5

mm

InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of

InGaAs PIN photodiodes with photosensitive area from

ϕ

0.3 mm to

ϕ

5 mm.

Features

Low noise, low dark current

Low terminal capacitance

Large photosensitive area

Various photosensitive area sizes available

Applications

Laser monitors

Optical power meters

Laser diode life test

NIR (near infrared) photometry

Optical communications

Specifications/Absolute maximum ratings

Dimensional

outline/

Window

material*

1

Photosensitive

area

Reverse

voltage

V

R

max

(V)

20

10

5

2

drop in product quality. Always be sure to use the

-40 to +100

-55 to +125

260 °C

or less,

within 10 s

Absolute maximum ratings

Operating

Storage

temperature temperature

Topr

Tstg

(°C)

(°C)

Type no.

Package

Cooling

Soldering

conditions

(mm)

G12180-003A

ϕ

0.3

G12180-005A

(1)/K

TO-18

ϕ

0.5

G12180-010A

ϕ

1

Non-cooled

G12180-020A

ϕ

2

(2)/K

TO-5

G12180-030A

ϕ

3

G12180-050A

(3)/K

TO-8

ϕ

5

*1:

K: borosilicate glass with anti-reflective coating (optimized for 1.55

μm

peak)

Note: Exceeding the absolute maximum ratings even momentarily may cause a

product within the absolute maximum ratings.

Electrical and optical characteristics (Typ. Ta=25

°C,

unless otherwise noted)

Peak

Spectral sensi-

response tivity

range wave-

λ

length

λp

Dark

current

I

D

V

R

=5 V

Cutoff

Terminal

Shunt

Temper- frequency

Detectivity

capacitance

resistance

fc

ature

Ct

D

*

Rsh

coefficient V

R

=5 V

λ=λp

V

R

=5 V

V

R

=10 mV

of dark R

L

=50

Ω

f=1 MHz

current

-3 dB

∆T

ID

Min. Typ. Typ. Max. Min. Typ. Min.

Typ.

1/2

(MHz) (MHz) (pF) (pF) (MΩ) (MΩ) (cm·Hz /W) (cm·Hz

1/2

/W)

450 600

5

7.5 200 1000

160 200 15

20

80 400

25

60

55 120 25 125

2.4 × 10

12

6.3 × 10

12

1.09

4*

3

13*

3

250*

3

800*

3

6.5 30

2.5*

3

7*

3

450*

3

1500*

3

4

20

3

3*

3

1000*

3

7000*

3

1.3

0.5*

6.5

Noize

equivalent

power

NEP

λ=λp

Typ.

(W/Hz

1/2

)

4.2 × 10

-15

7 × 10

-15

1.4 × 10

-14

2.8 × 10

-14

4.4 × 10

-14

7 × 10

-14

Max.

(W/Hz

1/2

)

1.2 × 10

-14

1.9 × 10

-14

3.8 × 10

-14

7.5 × 10

-14

1.1 × 10

-13

1.9 × 10

-13

Photosensitivity

S

Type no.

G12180-003A

G12180-005A

G12180-010A

G12180-020A

G12180-030A

G12180-050A

*2:

V

R

=1 V

*3:

V

R

=1 V, f=1 MHz

1.3

μm

λ=λp

Min. Typ. Min. Typ. Typ. Max.

(μm) (μm) (A/W) (A/W) (A/W) (A/W) (nA) (nA)

0.1 0.5

0.15 0.75

0.8

4

0.9 to 1.7 1.55 0.8 0.9 0.9 1.1

2

1.5* 7.5*

2

2.5*

2

12.5*

2

5*

2

25*

2

1