InGaAs PIN photodiodes
G12180 series
Dark current vs. reverse voltage
100 nA
(Typ. Ta=25
°C
)
Terminal capacitance vs. reverse voltage
(Typ. Ta=25
°C
, f=1 MHz)
10 nF
G12180-050A
G12180-050A
10 nA
G12180-030A
Terminal capacitance
1 nF
G12180-030A
G12180-020A
G12180-010A
G12180-020A
Dark current
1 nA
G12180-005A
G12180-010A
100 pA
G12180-003A
10 pA
0.01
100 pF
G12180-005A
10 pF
G12180-003A
0.1
1
10
100
1 pF
0.01
0.1
1
10
100
Reverse voltage (V)
KIRDB0542EA
Reverse voltage (V)
KIRDB0543EA
Shunt resistance vs. element temperature
100 GΩ
10 GΩ
1 GΩ
(Typ. V
R
=10 mV)
G12180-003A
Dimensional outlines (unit: mm)
(1) G12180-003A/-005A/-010A
5.4 ± 0.2
4.7 ± 0.1
2.6 ± 0.2
Window
2.2 min.
G12180-005A
Shunt resistance
100 MΩ
G12180-010A
10 MΩ
G12180-020A
1 MΩ
100 kΩ
10 kΩ
1 kΩ
-40
G12180-030A
0.45
Lead
2.5 ± 0.2
G12180-050A
-20
0
20
40
60
80
100
Element temperature (°C)
KIRDB0544EA
Case
KIRDA0150EC
13 min.
Photosensitive
surface
3.7 ± 0.2
3
HAMAMATSU [ HAMAMATSU CORPORATION ]
