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G1115 参数 Datasheet PDF下载

G1115图片预览
型号: G1115
PDF下载: 下载PDF文件 查看货源
内容描述: 磷砷化镓发光二极管 [GaAsP photodiode]
分类和应用: 二极管
文件页数/大小: 4 页 / 173 K
品牌: HAMAMATSU [ HAMAMATSU CORPORATION ]
 浏览型号G1115的Datasheet PDF文件第1页浏览型号G1115的Datasheet PDF文件第2页浏览型号G1115的Datasheet PDF文件第4页  
GaAsP photodiode
s
Dimensional
outlines (unit: mm)
G1115
WINDOW
3.0 ± 0.2
5.4 ± 0.2
3.55 ± 0.2
Diffusion type
G1116
9.1 ± 0.2
PHOTOSENSITIVE
SURFACE
0.45
LEAD
PHOTOSENSITIVE
SURFACE
0.45
LEAD
2.4
2.9
5.08 ± 0.2
Borosilicate glass window may extend a
maximum of 0.2 mm beyond the upper
surface of the cap.
2.54 ± 0.2
CONNECTED
TO CASE
Borosilicate glass window may extend a
maximum of 0.1 mm beyond the upper
surface of the cap.
14
CONNECTED
TO CASE
KGPDA0012EA
20
4.1 ± 0.2
4.7 ± 0.1
WINDOW
5.9 ± 0.1
8.1 ± 0.1
KGPDA0013EA
G1117
13.9 ± 0.2
5.0 ± 0.2
G1118
CATHODE
TERMINAL MARK 6.0 ± 0.2
ACTIVE AREA
5.0 ± 0.2
WINDOW
10.5 ± 0.1
12.35 ± 0.1
PHOTOSENSITIVE
SURFACE
7.5 ± 0.2
MARK ( 1.4)
0.6
0.45
LEAD
3.0 ± 0.2
CONNECTED
TO CASE
Borosilicate glass window may extend a
maximum of 0.2 mm beyond the upper
surface of the cap.
KGPDA0014EA
14
1.5 ± 0.2
PHOTOSENSITIVE
SURFACE
0.45
LEAD
1.9
15
KGPDA0002EA