NMOS multichannel detector head
s
Absolute maximum ratings
C5964 series
Unit
V
V
V
°C
°C
Parameter
Supply voltage (for digital circuitry)
Supply voltage (for analog circuitry)
Digital input voltage
Operating temperature
Storage temperature
Parameter
Symbol
+V
D
±V
A
-
Topr
Tstg
Value
-0.5 to +7
±18
V
D
+10 to +30
0 to +50
s
Electrical characteristics (Ta=25 °C, V
D
=+5 V, ±V
A
=±15 V, unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
High level
V
IH
+2.0
-
+V
D
V
Digital input
Low level
V
IL
-0.5
-
+0.8
V
Master clock (CLK) pulse frequency
f
CLK
-
-
375
kHz
Video signal readout frequency
fv
-
-
f
CLK
/6
Hz
Master start (start) pulse width
tst
1/f
CLK
-
-
s
High level (Io= -6 mA)
V
IH
+2.0
-
-
V
Digital output
-
-
+0.8
V
Low level (Io=+6 mA)
V
IL
Digital
+V
D
+4.75
+5.0
+5.25
V
Power supply conditions:
Rated voltage
Analog
±V
A
±14.5
±15.0
±15.5
V
*1
+5 Vdc
-
-
-
+2.0
A
Power supply conditions:
+15 Vdc
-
-
-
+100
mA
Current consumption
-15 Vdc
-
-
-
-100
mA
*1: Including the current consumption of the Peltier element incorporated in the NMOS linear image sensor (S5930 series, etc.)
s
Electrical and optical characteristics (Ta=25 °C, Ts=0 °C, V
,
=+5 V, ±V
)
=±15 V, unless otherwise noted)
Parameter
Spectral response range
Built in sensors
Symbol
λ
λp
S5930/S5931 series
S8382/S8383 series
S5930 series
S5931 series
S8382 series
S8383 series
S5930 series
S5931 series
S8382 series
S8383 series
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
200 to 1000
600
750
50
25
50
25
0.009
0.004
0.009
0.004
-
0.2
0.4
0.2
0.4
Peak sensitivity wavelength
Saturation output charge
Qsat
Dark current
Photo response non-uniformity
*2
I
D
PRNU
S5930 series
S5931 series
Conversion gain
Gc
S8382 series
S8383 series
*2: Use for A light source. 50 % of saturation, excluding first and last pixels.
Max.
-
-
-
-
-
-
-
0.03
0.01
0.03
0.01
±3
-
-
-
-
Unit
nm
nm
pC
pA/pixel
%
V/pC
HAMAMATSU [ HAMAMATSU CORPORATION ]
